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Semiconductor applications require components with precise specifications and exceptional performance properties. Silicon carbide has long been recognized as an ideal material for these applications. However, the traditional production processes of silicon carbide can result in impure elements that compromise the true performance of this material.
Dow’s bulk chemical vapor deposition (CVD) process for silicon carbide creates a solid, pure material that enables design engineers to fully leverage the properties of silicon carbide, such as its superior hardness and stiffness, low coefficient of thermal expansion, and excellent chemical and oxidation resistance. |
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